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| NTE215 Silicon NPN Transistor Darlington Driver Description: The NTE215 is a silicon NPN Darlington transistor in a TO3P type package. Typical applications include motor drivers, printer hammer drivers, relay drivers, regulated DC power supply controllers. Features: D High DC Current Gain D Large Current Capacity and Wide ASO D Low Saturation Voltage Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110V Collector to Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter to Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Collector Dissipation (TA = +25C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5W Collector Dissipation (TC = +25C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current Gain-Bandwidth Product Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Turn-On Time Storage Time Fall Time Symbol ICBO IEBO hFE fT VCE(sat) VBE(sat) V(BR)CBO ton tstg tf Test Conditions VCB = 80V, IE = 0 VEB = 5V, IC = 0 VCE = 3V, IC = 4A VCE = 5V, IC = 4A IC = 4A, IB = 8mA IC = 4A, IB = 8mA IC = 5mA, IE = 0 VCC = 50V, VBE = -5V, 500IB1 = -500IB2 = IC = 4A, PW = 50s, Duty Cycle 1% Min - - 1500 - - - 110 100 - - - Typ - - 4000 20 0.9 - - - 0.6 4.8 1.6 Max Unit 0.1 3.0 - - 1.5 2.0 - - - - - MHz V V V V s s s mA mA V(BR)CEO IC = 50mA, RBE = Schematic Diagram C B E .190 (4.82) .615 (15.62) C .787 (20.0) .591 (15.02) .126 (3.22) Dia .787 (20.0) B C E .215 (5.47) |
Price & Availability of NTE215
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